stp 662 5 p channel enhancement mode mosfet - 5 .0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . stp 662 5 20 10 . v1 scription stp 662 5 is the p - channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices are particularly suited for low voltage ap plication, noteook power management ane ther battery powered circuits where high - side witching . pin configuration sop - 8 part marking sop - 8 feature l - 6 0v/ - 5 .0a , r ds(on) = 6 0 m (typ.) @v gs = - 1 0 l - 6 0v/ - 3 .0 a, r ds(on) = 85 m @v gs = - 4.5 v l super high density cell design for extremely low r ds(on) l exceptional on - resistance and maximum dc current capability l sop - 8 package de sign
stp 662 5 p channel enhancement mode mosfet - 5 .0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . stp 662 5 20 10 . v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage v dss - 6 0 v gate - source voltage v gss 20 v contin uous drain current (tj=150 ) t a =25 t a =70 i d - 5 .0 - 4 .0 a pulsed drain current i dm - 25 a continuous source current (diode conduction) i s - 3 a power dissipation t a =25 t a =70 p d 2.3 1.3 w operation junction temperature t j - 55/150 storgae temper ature range t stg - 55/150 thermal resistance - junction to ambient r ja 70 /w
stp 662 5 p channel enhancement mode mosfet - 5 .0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . stp 662 5 20 10 . v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition m in typ max unit static drain - source breakdown voltage v (br)dss v gs =0v,i d = - 250ua - 6 0 v gate threshold voltage v gs(th) v ds =v gs ,i d = - 250 ua - 0.8 - 2.5 v gate leakage current i gss v ds =0v,v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 48 v,v gs =0v - 1 ua v ds = - 48 v,v gs =0v t j =85 - 10 drain - source on - resistance r ds(on) v gs = - 10v, i d = - 5 a v gs = - 4.5 v, i d = - 3 a 0. 0 60 0. 0 85 0.0 72 0.0 95 forward tran conductance g fs v ds = - 5 v,i d = - 6 . 7 a 1 8 s diode forward voltage v sd i s = - 2 .3 a ,v gs =0v - 0. 7 - 1. 0 v dynamic total gate charge q g v ds = - 3 0 v,v gs = - 10 i d - 6.2 a 4 5 nc gate - source charge q gs 5 .2 gate - drain charge q gd 9.3 input capacitance ciss v ds = - 3 0 v,v gs = 0 v f=1mhz 20 1 0 pf output capacitance coss 1 30 reverse transfer c apacitance crss 1 0 5 turn - on time t d(on) tr v d s = - 3 0 v,r l = 4 .7 v gs = - 10v , r gen = 3 9 ns 6.1 turn - off time t d(off) tf 44 1 2 .9
stp 662 5 p channel enhancement mode mosfet - 5 .0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . stp 662 5 20 10 . v1 typical characterictics
stp 662 5 p channel enhancement mode mosfet - 5 .0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . stp 662 5 20 10 . v1 typical characterictics
stp 662 5 p channel enhancement mode mosfet - 5 .0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . stp 662 5 20 10 . v1 typical characterictics
stp 662 5 p channel enhancement mode mosfet - 5 .0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . stp 662 5 20 10 . v1 sop - 8 package outline
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